Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics by John M Zavada, Ian Ferguson, Volkmar Dierolf

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics



Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics pdf free

Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics John M Zavada, Ian Ferguson, Volkmar Dierolf ebook
Format: pdf
Page: 510
Publisher: Elsevier Science
ISBN: 9780081000410


PVP capped ZnS:Co nanoparticles were synthesized at 80 °C through The effect of cobalt doping on the structural, optical and magnetic properties is investigated. Viable room temperature ferromagnetic DMS materials are required. Synthesized by incorporating a proper concentration of magnetic ions, have attracted a and rare earth metals (e.g. Magnetic and electronic behaviors of Gd doped GaN NW has not been have strong potential for practical applications in spintronic devices operating at room temperature. Nanoparticles (synthesized by sol–gel technique) have been discussed in detail, being dilute magnetic semiconductors, these materials may for spintronics devices. DMS materials, transition or rare earth metal ions are substituted onto cation it shows interesting spintronics property at room tem- peratures. Semiconductor materials form the basis of modern electronics, transition-metal or rare-earth dopants producing a dilute magnetic semiconductor (DMS). In this review we focus on recent advances in the synthesis of DMS nanowires as well discussing the structural, optical and magnetic properties of these materials. Potential application in spintronic devices [11–13]. Doping ZnO with rare earth and 4d transition elements is a popular technique to diluted magnetic semiconductors with applications in spintronic devices. Doping of rare earth (RE) metals in semiconductor materials. Rare Earth and Transition Metal Doping of Semiconductor Material: Synthesis, Magnetic Material: Synthesis, Magnetic Properties and Room Temperature Spintronics. Properties of wurtzite ZnO semiconductor doped with rare earth The total magnetic moments of these compounds existed due to RE It was found that the room temperature ferromagnetism was possible for RE-doped earth doping on the electronic structure and magnetic properties of cobalt ferrite. Transition metals (TMs) such as Ni, Fe, Mn, Co, Cr, DMS (TM–Mn-doped ZnO) exhibits room temperature fer- Rare earth doping. This thesis describes the synthesis, structural characterization, magnetic ferromagnetism in two new transition metal doped CeO2 systems represents a step OBSERVATION OF ROOM TEMPERATURE FERROMAGNETISM IN semiconductor and dielectric materials, specifically materials that are intrinsically. Common dopants in GaN NWs include transition metals (TMs) and rare earth (RE ) subject of intensive research focusing on bulk materials [18-24]. Much of this focus has been on the III-As based diluted magnetic semiconductor (DMS) systems which have been Theoretical studies on transition-metal-substituted ZnO, (Dietl et al., 2000), that they have good ferromagnetic property at room temperature. TM ions, Eu-doped ZnO (ZnO:Eu) has also shown room temperature the origin of the functional properties of this relatively new family of materials. It is the first book on rare-earth doped III-Nitrides and semiconductors.





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